Horwat D. , Jullien M. , Capon F. , Pierson J.-F. , Andersson J. , ENDRINO ARMENTEROS, JOSÉ LUIS
Si
J. Phys. D-Appl. Phys.
Article
Científica
1.292
01/01/2010
000275750700003
2-s2.0-77949723156
We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L 3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3(ZnO)m homologous phase that degrades the electrical conductivity. © 2010 IOP Publishing Ltd.
Al-doped ZnO; Electrical conductivity; Octahedral conformations; Sample position; Sputtered films; Wurtzites; X-ray absorption near-edge structure; ZnO; Doping (additives); Electric conductivity; Electronic structure; Oxygen; Zinc; Zinc oxide; Zinc sulfide; Aluminum