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Structural and tribological characterization of Ti-In-N films deposited by magnetron sputter deposition

Autores

Nowicki M.A. , Krzanowski J.E. , ENDRINO ARMENTEROS, JOSÉ LUIS

Publicación externa

Si

Medio

J. Mater. Res.

Alcance

Article

Naturaleza

Científica

Cuartil JCR

Cuartil SJR

Impacto JCR

1.713

Impacto SJR

0.92

Fecha de publicacion

01/01/2012

ISI

000304064500012

Scopus Id

2-s2.0-84857886361

Abstract

TiN-indium composite films were deposited by simultaneous sputtering of titanium and indium in a mixed Argon/Nitrogen atmosphere and characterized for tribological applications. Film compositions showed a nonlinear behavior as a function of sputter gun power. For films deposited at -50 V bias, and containing less than 29 relative percent indium, the films had a face centered cubic structure, but at higher indium contents (63-82%) the structure was not consistent with either TiN or indium. At -150 V bias, the films had either the TiN structure, In-type structure, or a mixture of the two. Atomic force microscopy images showed the formation of semispherical drops on the surface of the samples deposited at -50 V bias voltage, whereas at -150 V bias voltage the samples exhibited a smooth coating surface with occasional ellipsoidal blisters. Nanoindentation test of the films shows low hardness (5-12 GPa), but tribological testing showed that frictional behavior can be improved by moderate heating before testing, suggesting indium segregation to the surface. Copyright © Materials Research Society 2011.

Palabras clave

Atomic force microscopies (AFM); Face centered cubic structure; Film composition; Frictional behavior; Indium content; Indium segregation; Low hardness; Magnetron sputter deposition; Nanoindentation tests; Nonlinear behavior; Smooth coatings; Tribological applications; Tribological characterization; Atomic force microscopy; Bias voltage; Composite films; Indium; Nanoindentation; Nitrides; Sputter deposition; Surface segregation; Surfaces; Tinning; Titanium; Tribology; Titanium nitride

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