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Impact of the particles impingement on the electronic conductivity of Al doped ZnO films grown by reactive magnetron sputtering

Authors

Jullien M. , Horwat D. , ENDRINO ARMENTEROS, JOSÉ LUIS, Escobar Galindo R. , Bauer Ph. , Pierson J.F.

External publication

Si

Means

IOP Conf. Ser. Mater. Sci. Eng.

Scope

Conference Paper

Nature

Científica

JCR Quartile

✗

SJR Quartile

✗

SJR Impact

0.179

Web

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908425788&doi=10.1088%2f1757-899X%2f12%2f1%2f012006&partnerID=40&md5=c949fd9e8615d1e905895348259fe128

Publication date

01/01/2010

ISI

000315347000006

Scopus Id

2-s2.0-84908425788

DOI

10.1088/1757-899X/12/1/012006

Abstract

Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change in composition. Optical investigation showed a strong variation of the density of free carriers, through the Burstein-Moss effect, suggesting that Al dopants were partially inactivated. © 2010 IOP Publishing Ltd.

Keywords

Chemical analysis; Magnetron sputtering; Oxide films; Rutherford backscattering spectroscopy; Semiconductor doping; Thin films; X ray diffraction; Zinc oxide; Burstein-Moss effects; Doped zinc oxide thin films; Electronic conductivity; Four-point probe techniques; High heterogeneity; Optical investigation; Optical spectrophotometry; Reactive magnetron sputtering; Aluminum