| Título | Nanostructure and mechanical properties of WC-SiC thin films |
|---|---|
| Autores | ENDRINO ARMENTEROS, JOSÉ LUIS, Krzanowski J.E. |
| Publicación externa | Si |
| Medio | J. Mater. Res. |
| Alcance | Article |
| Naturaleza | Científica |
| Cuartil JCR | 1 |
| Cuartil SJR | 1 |
| Impacto JCR | 1.53 |
| Impacto SJR | 1.382 |
| Web | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036968258&doi=10.1557%2fJMR.2002.0457&partnerID=40&md5=dec47d37f952e70df8fc9272de4b97bd |
| Fecha de publicacion | 01/01/2002 |
| ISI | 000179614600026 |
| Scopus Id | 2-s2.0-0036968258 |
| DOI | 10.1557/JMR.2002.0457 |
| Abstract | The mechanical properties of WC-SiC thin films deposited by dual radio frequency magnetron sputtering were investigated. The films were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM) to evaluate the details of the microstructure and degree of amorphization. The results indicate that small additions of SiC (<25%) can significantly increase hardness compared to a pure WC film, but higher SiC contents do not strongly affect hardness. XRD studies show the SiC had a disordering effect. TEM results showed that WC films had coarse porous structure, but films with a low silicon carbide content (approximately 10 to 25 at%) had a denser nanocrystalline structure. Samples with greater than 25% SiC were amorphous. The initial hardness increase at lower SiC contents correlated well with the observed densification, but the transition to an amorphous structure did not strongly affect hardness. |
| Palabras clave | Amorphization; Crystal microstructure; Densification; Hardness; Magnetron sputtering; Nanostructured materials; Porosity; Silicon carbide; Transmission electron microscopy; Tungsten carbide; X ray diffraction analysis; X ray photoelectron spectroscopy; Dual radio frequency magnetron sputtering; Nanocrystalline structure; Porous structure; Thin films |
| Miembros de la Universidad Loyola |