| Título |
Impact of the particles impingement on the electronic conductivity of Al doped ZnO films grown by reactive magnetron sputtering |
| Autores |
Jullien M. , Horwat D. , ENDRINO ARMENTEROS, JOSÉ LUIS, Escobar Galindo R. , Bauer Ph. , Pierson J.F. |
| Publicación externa |
Si |
| Medio |
IOP Conf. Ser. Mater. Sci. Eng. |
| Alcance |
Conference Paper |
| Naturaleza |
Científica |
| Impacto SJR |
0.17900 |
| Web |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908425788&doi=10.1088%2f1757-899X%2f12%2f1%2f012006&partnerID=40&md5=c949fd9e8615d1e905895348259fe128 |
| Fecha de publicacion |
01/01/2010 |
| ISI |
000315347000006 |
| Scopus Id |
2-s2.0-84908425788 |
| DOI |
10.1088/1757-899X/12/1/012006 |
| Abstract |
Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change in composition. Optical investigation showed a strong variation of the density of free carriers, through the Burstein-Moss effect, suggesting that Al dopants were partially inactivated. © 2010 IOP Publishing Ltd. |
| Palabras clave |
Chemical analysis; Magnetron sputtering; Oxide films; Rutherford backscattering spectroscopy; Semiconductor doping; Thin films; X ray diffraction; Zinc oxide; Burstein-Moss effects; Doped zinc oxide t |
| Miembros de la Universidad Loyola |
|
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