ENDRINO ARMENTEROS, JOSÉ LUIS, Palacín S. , Gutiérrez A. , Schäffers F. , Krzanowski J.E.
Si
J. Mater. Sci.
Article
Científica
1.081
0.622
01/01/2007
000247934800080
2-s2.0-34547296515
A study was conducted to analyze the local structure and bonds of silicon in TiSiN and AlCrSiN metal nitrides, investigated by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES). Samples were deposited using pulsed megatron sputtering from Ti and Si targets and cathodic arc evaporation from customized AlCrSi targets, which contained 70 at % of Al and a variable amount of Cr and Si. XANES measurements of the Ti and Si k-edges were carried out, with double crystal monochromator, using a standard chamber equipped with a high-resolution solid-state fluorescence detector. Si (III) monochromator crystals were used to provide photon energy selection at the Cr K-edge and Ti- K-edge, while InSb (III) was used to collect the Si K-edge spectra.
Evaporation; Nitrides; Photons; Single crystals; X ray absorption near edge structure spectroscopy; X ray diffraction; Cathodic arc evaporation; Crystal monochromator; Solid-state fluorescence detector; Silicon