Título On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films
Autores Horwat D. , Jullien M. , Capon F. , Pierson J.-F. , Andersson J. , ENDRINO ARMENTEROS, JOSÉ LUIS
Publicación externa Si
Medio JOURNAL OF PHYSICS D-APPLIED PHYSICS
Alcance Article
Naturaleza Científica
Cuartil JCR 2
Cuartil SJR 1
Impacto SJR 1.29200
Web https://www.scopus.com/inward/record.uri?eid=2-s2.0-77949723156&doi=10.1088%2f0022-3727%2f43%2f13%2f132003&partnerID=40&md5=1f0b92f4663566b25057c856b1862d9e
Fecha de publicacion 01/01/2010
ISI 275750700003
Scopus Id 2-s2.0-77949723156
DOI 10.1088/0022-3727/43/13/132003
Abstract We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L 3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3(ZnO)m homologous phase that degrades the electrical conductivity. © 2010 IOP Publishing Ltd.
Palabras clave Al-doped ZnO; Electrical conductivity; Octahedral conformations; Sample position; Sputtered films; Wurtzites; X-ray absorption near-edge structure; ZnO; Doping (additives); Electric conductivity; Elec
Miembros de la Universidad Loyola

Change your preferences Gestionar cookies