| Title |
Low and increased solubility of silicon in metal nitrides: Evidence by X-ray absorption near edge structure |
| Authors |
ENDRINO ARMENTEROS, JOSÉ LUIS, Palacín S. , Gutiérrez A. , Schäffers F. , Krzanowski J.E. |
| External publication |
Si |
| Means |
JOURNAL OF MATERIALS SCIENCE |
| Scope |
Article |
| Nature |
Científica |
| JCR Quartile |
2 |
| SJR Quartile |
1 |
| JCR Impact |
1.081 |
| SJR Impact |
0.622 |
| Web |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547296515&doi=10.1007%2fs10853-007-1870-9&partnerID=40&md5=e2a8aac127010071ee2a56076a769094 |
| Publication date |
01/01/2007 |
| ISI |
000247934800080 |
| Scopus Id |
2-s2.0-34547296515 |
| DOI |
10.1007/s10853-007-1870-9 |
| Abstract |
A study was conducted to analyze the local structure and bonds of silicon in TiSiN and AlCrSiN metal nitrides, investigated by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES). Samples were deposited using pulsed megatron sputtering from Ti and Si targets and cathodic arc evaporation from customized AlCrSi targets, which contained 70 at % of Al and a variable amount of Cr and Si. XANES measurements of the Ti and Si k-edges were carried out, with double crystal monochromator, using a standard chamber equipped with a high-resolution solid-state fluorescence detector. Si (III) monochromator crystals were used to provide photon energy selection at the Cr K-edge and Ti- K-edge, while InSb (III) was used to collect the Si K-edge spectra. |
| Keywords |
Evaporation; Nitrides; Photons; Single crystals; X ray absorption near edge structure spectroscopy; X ray diffraction; Cathodic arc evaporation; Crystal monochromator; Solid-state fluorescence detector; Silicon |
| Universidad Loyola members |
|
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