Title Low and increased solubility of silicon in metal nitrides: Evidence by X-ray absorption near edge structure
Authors ENDRINO ARMENTEROS, JOSÉ LUIS, Palacín S. , Gutiérrez A. , Schäffers F. , Krzanowski J.E.
External publication Si
Means J. Mater. Sci.
Scope Article
Nature Científica
JCR Quartile 2
SJR Quartile 1
JCR Impact 1.08100
SJR Impact 0.62200
Web https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547296515&doi=10.1007%2fs10853-007-1870-9&partnerID=40&md5=e2a8aac127010071ee2a56076a769094
Publication date 01/01/2007
ISI 000247934800080
Scopus Id 2-s2.0-34547296515
DOI 10.1007/s10853-007-1870-9
Abstract A study was conducted to analyze the local structure and bonds of silicon in TiSiN and AlCrSiN metal nitrides, investigated by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES). Samples were deposited using pulsed megatron sputtering from Ti and Si targets and cathodic arc evaporation from customized AlCrSi targets, which contained 70 at % of Al and a variable amount of Cr and Si. XANES measurements of the Ti and Si k-edges were carried out, with double crystal monochromator, using a standard chamber equipped with a high-resolution solid-state fluorescence detector. Si (III) monochromator crystals were used to provide photon energy selection at the Cr K-edge and Ti- K-edge, while InSb (III) was used to collect the Si K-edge spectra.
Keywords Evaporation; Nitrides; Photons; Single crystals; X ray absorption near edge structure spectroscopy; X ray diffraction; Cathodic arc evaporation; Crystal monochromator; Solid-state fluorescence detecto
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