Title The effects of substrate bias on phase stability and properties of sputter-deposited tungsten carbide
External publication Si
Means Mater. Lett.
Scope Article
Nature Científica
JCR Quartile 2
SJR Quartile 1
JCR Impact 1.18600
SJR Impact 0.65200
Web https://www.scopus.com/inward/record.uri?eid=2-s2.0-4944222391&doi=10.1016%2fj.matlet.2004.04.036&partnerID=40&md5=d8bafc162cff8313652e2ef0d01fe2e0
Publication date 01/01/2004
ISI 000224449500014
Scopus Id 2-s2.0-4944222391
DOI 10.1016/j.matlet.2004.04.036
Abstract The effects of substrate bias on phase formation and physical properties of rf magnetron sputter-deposited tungsten carbide films have been investigated in this work. Films were deposited at 275°C using bias levels ranging from 0 to -150 V and at room temperature and -160 V. At low bias levels, the films were primarily composed of the WC1-x/W2(C,O) phases, both of which have the B1 structure, and the fraction of the hexagonal W2C phase increased with bias level. The increased substrate bias levels also correlated with a reduction in oxygen content, suggesting that reducing oxygen content promotes formation of the W2C phase. However, the film deposited at room temperature and -160 V bias had an oxygen content of only 3%, yet did not form the W2C phase, indicating a minimum level of thermal activation is also required to form W2C. Increasing the bias voltage also resulting in increases in film hardness, modulus and compressive residual stress, while reducing resistivity. © 2004 Elsevier B.V. All rights reserved.
Keywords Composition; Compressive stress; Elastic moduli; Electric potential; Hardness; Magnetrons; Residual stresses; Sputter deposition; Thermal effects; Tungsten carbide; Atomic ratio; Phase formation; Phas
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