Title X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films
Authors Gago, R. , Soldera, F. , Huebner, R. , Lehmann, J. , Munnik, F. , Vazquez, L. , Redondo-Cubero, A. , ENDRINO ARMENTEROS, JOSÉ LUIS
External publication Si
Means J Alloys Compd
Scope Article
Nature Científica
JCR Quartile 1
SJR Quartile 1
JCR Impact 2.72600
SJR Impact 1.05900
Web https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874425666&doi=10.1016%2fj.jallcom.2013.01.130&partnerID=40&md5=24cb267f992d0a62a816b572076d8ded
Publication date 05/06/2013
ISI 000316683700016
Scopus Id 2-s2.0-84874425666
DOI 10.1016/j.jallcom.2013.01.130
Abstract Titanium aluminium nitride (TiAlN) coatings have been grown by reactive (Ar/N-2) direct-current magnetron sputtering from a Ti50Al50 compound target. The film composition has been quantified by ion beam analysis showing the formation of Al-rich nitrides (Ti/Al similar to 0.3), with stoichiometric films for N-2 contents in the gas mixture equal or above similar to 25%. The surface morphology of the films has been imaged by atomic force microscopy, showing very smooth surfaces with roughness values below 2 nm. X-ray and electron diffraction patterns reveal that the films are nanocrystalline with a wurzite (w) structure of lattice parameters larger (similar to 2.5%) than those for w-AlN. The lattice expansion correlates with the Ti/Al ratio in stoichiometric films, which suggests the incorporation of Ti into w-AlN. The atomic environments around Ti, Al and N sites have been extracted from the X-ray absorption near-edge structure (XANES) by recording the Ti2p, Al1s and N1s edges, respectively. The analysis of the XANES spectral lineshape and comparison with reported theoretical calculations confirm the formation of a ternary hexagonal phase. (C) 2013 Elsevier B. V. All rights reserved.
Keywords Nitride materials; Vapour deposition; Atomic scale structure; NEXAFS/XANES
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