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X-ray absorption spectroscopy study at the Si K-edge of tungsten carbide-silicon carbide thin films

Authors

Krzanowski J.E. , Palacín S. , Gutiérrez A. , Schäfers F. , Mertin M. , ENDRINO ARMENTEROS, JOSÉ LUIS, Soriano L.

External publication

Si

Means

Scr. Mater.

Scope

Article

Nature

Científica

JCR Quartile

✓

SJR Quartile

✓

JCR Impact

2.481

SJR Impact

2.216

Web

https://www.scopus.com/inward/record.uri?eid=2-s2.0-34247177443&doi=10.1016%2fj.scriptamat.2007.03.001&partnerID=40&md5=62245aba58a0dc725715a3eeecf40687

Publication date

01/01/2007

ISI

000246605300002

Scopus Id

2-s2.0-34247177443

DOI

10.1016/j.scriptamat.2007.03.001

Abstract

X-ray absorption spectroscopy (XAS) has been used to determine the compositional and structural nature of the phases formed in sputter-deposited W-Si-C films. The Si K-edge was examined to determine the presence and crystallinity of the SiC phase. For a film composition of 22% SiC, the XAS results show that there is at best only a minor amount of crystallization of SiC when deposited at 350 °C, but crystallization becomes more definitive at 600 °C. For a film with 29% SiC deposited at 350 °C, no crystalline SiC was detected. © 2007 Acta Materialia Inc.

Keywords

Crystallization; Physical vapor deposition; Silicon carbide; Sputter deposition; Tungsten carbide; X ray absorption spectroscopy; X ray diffraction; Crystallinity; Film composition; K-edge; Structural nature; Thin films