Jullien M. , Horwat D. , ENDRINO ARMENTEROS, JOSÉ LUIS, Escobar Galindo R. , Bauer Ph. , Pierson J.F.
Si
IOP Conf. Ser. Mater. Sci. Eng.
Conference Paper
Científica
0.179
01/01/2010
000315347000006
2-s2.0-84908425788
Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change in composition. Optical investigation showed a strong variation of the density of free carriers, through the Burstein-Moss effect, suggesting that Al dopants were partially inactivated. © 2010 IOP Publishing Ltd.
Chemical analysis; Magnetron sputtering; Oxide films; Rutherford backscattering spectroscopy; Semiconductor doping; Thin films; X ray diffraction; Zinc oxide; Burstein-Moss effects; Doped zinc oxide thin films; Electronic conductivity; Four-point probe techniques; High heterogeneity; Optical investigation; Optical spectrophotometry; Reactive magnetron sputtering; Aluminum